Dawon Kahng – Wikipedia

Dawon Kahng (May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer known for his work at Solid-State Electronics.

Dawon Kahng
Born May 4, 1931
SeoulSouth Korea
Died May 13, 1992 (aged 61)
New BrunswickNew Jersey

Dawon was born on May 4, 1931 in Seoul, South Korea. He studied Physics at Seoul National University, Seoul, South Korea, and emigrated to the United States in 1955 to attendOhio State University, where he received a doctorate in physics.

He was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey and he invented MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which is the basic element in most of today’s electronic equipment, with Martin M Atalla in 1959. Along with his colleague Simon Sze, he also invented the floating gate memory cell, the foundation for many forms of semiconductor memory devices. He also conducted research on high frequency Schottky diodes, ferro-electric semiconductors, and luminous materials, and made important contributions to the field of electroluminescence. He also invented Floating Gate non-volatile semiconductor memory in 1967.

https://en.m.wikipedia.org/wiki/Dawon_Kahng

Dawon Kahng – Wikipedia was last modified: September 27th, 2017 by Jovan Stosic

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